unisonic technologies co., ltd 2sd879 npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2015 unisonic technologies co., ltd qw-r208-010.c 1.5v, 3v strobe applications ? description the utc 2sd879 is a npn epitaxial silicon transistor, designed for 1.5v and 3v strobe applications. ? features * in applications where two nicd batteries are used to provide 2.4v, two 2sd879 s are used. * the charge time is approximatel y 1 second faster than that of germanium transistors. * less power dissipation because of l wo collector-to-emitter voltage v ce(sat) , permitting more flashes of light to be emitted. * large current capacity and highly resistant to break-down. * excellent linearity of h fe in the region from low current to high current. ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - 2sd879g-ab3-r sot-89 b c e tape reel 2sd879l-t92-b 2SD879G-T92-B to-92 e c b tape box 2sd879l-t92-k 2sd879g-t92-k to-92 e c b bulk note: pin assignment: e: emitter c: collector b: base ? marking sot-89 to-92
2sd879 npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r208-010.c ? absolute maximum rating ( t a =25c ,unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 30 v collector-emitter voltage v cex 20 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 6 v collector dissipation p d 1 w collector current (dc) i c 3 a collector current (pulse) i cp 5 a junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: 1. pulse condition -> 100 ms single pulse 2. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base voltage v cbo i c =10ua, i e =0 30 v collector-emitter voltage v cex i c =1ma, v be =3v 20 v collector-emitter voltage v ceo i c =1ma, r be = ? 10 v emitter-base voltage v ebo i e =10ua, i c =0 6 v base-emitter voltage v be v ce =-1v,i c =-2a 0.83 1.5 v collector cut-off current i cbo v cb =20v, i e =0 1 ? a emitter cut-off current i ebo v eb =4v, i c =0 1 ? a dc current gain h fe v ce =2v, i c =3a (pulse) 140 210 400 collector-emitter satu ration voltage v ce ( sat ) i c =3a, i b =60ma (pulse) 0.3 0.4 v current gain bandwidth product f t v ce =10v, i c =50ma 200 mhz output capacitance c ob v cb =10v, f=1mhz 30 pf pulse: 1ms
2sd879 npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r208-010.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
